Predicate |
Object |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2020-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-102145262-B1 |
titleOfInvention |
Dual strained cladding layers for semiconductor devices |
abstract |
Techniques and methods relate to dual strained cladding layers for semiconductor devices and systems incorporating such semiconductor devices. |
priorityDate |
2013-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |