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filingDate 2015-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25bbfb8c0b2a5cca598af3c89eef52e0
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publicationDate 2015-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20150142632-A
titleOfInvention Crystalline multiple-nanosheet strained channel fets and methods of fabricating the same
abstract A field effect transistor and a method of manufacturing the same are provided. The field effect transistor includes a strained crystalline semiconductor channel region and a body layer having a gate stack on the channel region. The gate stack includes a crystalline gate dielectric layer between the channel region and a lattice mismatched crystalline semiconductor gate layer and between the gate layer and the channel region.
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