http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102343223-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3738 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3731 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102343223-B1 |
| titleOfInvention | Semiconductor device and method for fabricating the same |
| abstract | To provide a semiconductor device capable of improving operational performance and reliability by facilitating heat dissipation generated by a transistor. The semiconductor device includes a substrate, a heat-conducting layer on the substrate, a heat-conducting layer in which an impurity concentration of the heat-conducting layer is different from an impurity concentration of the substrate, a first end including a first end and a second end on the heat-conducting layer As a wire pattern, a first wire pattern in which a concentration of an impurity included in the first wire pattern is greater than a concentration of an impurity included in the heat-conducting layer and a concentration of an impurity included in the substrate, a first end of the first wire pattern and a first semiconductor pattern in contact with the heat-conducting layer, a second semiconductor pattern in contact with a second end of the first wire pattern, and a circumference of the first wire pattern between the first semiconductor pattern and the second semiconductor pattern. and a surrounding gate electrode. |
| priorityDate | 2015-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.