http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11437242-B2
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
filingDate | 2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2022-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6ebd60c4c4f1e11f1d48fb17a0c695a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a87a7ef8e7115ebd2e3737fd63b3b3e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfd59db2e22ccef79ffb9d9d5a308f8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f10c8c4ea5f462f246c67ea57c1f9ba1 |
publicationDate | 2022-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-11437242-B2 |
titleOfInvention | Selective removal of silicon-containing materials |
abstract | Exemplary methods of etching semiconductor substrates may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The processing region may house a substrate having an exposed region of a first silicon-containing material and an exposed region of a second silicon-containing material. The second silicon-containing material may be exposed within a recessed feature defined by the substrate. The methods may include flowing a silicon-containing precursor into the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the semiconductor processing chamber to generate plasma effluents of the fluorine-containing precursor and the silicon-containing precursor. The methods may include contacting the substrate with the plasma effluents. The methods may include removing at least a portion of the second silicon-containing material. |
priorityDate | 2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 1450.