| abstract |
(57) [Summary] [Objective] The object is to achieve more complete etching cleaning while utilizing a smaller amount of nitrogen trifluoride. [Configuration] The method of the present invention Diluents electropositive a NF 3, preferably argon and a predetermined concentration, pressure, to achieve the highest etch rate as possible used in a mixture at a flow rate and output. It is also possible to increase the etching rate of the film to be processed by lowering the concentration of NF 3 in the diluent by choosing the appropriate diluent and operating conditions. This method not only increases the throughput of the reactor using this method by increasing the etching rate, but also can accomplish this work with low concentrations of NF 3 , resulting in lower cost. |