| abstract |
A component ( 10 ) for a semiconductor processing apparatus includes a matrix ( 10 a ) defining a shape of the component, and a protection film ( 10 c ) covering a predetermined surface of the matrix. The protection film ( 10 c ) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film ( 10 c ) has a porosity of less than 1% and a thickness of 1 nm to 10 μm. |