abstract |
An apparatus for forming an oxide film on the surface of a substrate S by a CVD method under the pressure conditions close to the atmospheric pressure, comprising: gas supply sources 3 A, 3 B for supplying process gases of two components, a raw gas (A) comprising a silicon-contained gas such as TMOS, MTMOS or the like, and a reactive gas (B) comprising an oxidizing gas such as O 2 , N 2 O or the like, and a discharge processing section 1 . The process gas (A) is mixed, in the vicinity of the surface of a substrate without discharge processing, with the process gas (B) discharge processed in the discharge processing section 1 , whereby in the CVD method under normal pressure, an oxide film which is excellent in membranous and coverage property is formed at a fast film forming speed. More preferably, a H 2 O gas discharge processed or not discharge processed is mixed. |