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filingDate 2004-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59f2c67504ec58c4e1e8591218e5b29f
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publicationDate 2005-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2005051424-A1
titleOfInvention Sputtering using an unbalanced magnetron
abstract A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103038864-A
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Total number of triples: 47.