| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76868 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1996-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1998-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb9e7f2684f31dcc939610c7ad349cca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_353d926b7c6c70ae5a3072f2890d243f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d21a788a6ec69dfe765cdc0283bdc61 |
| publicationDate |
1998-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5833817-A |
| titleOfInvention |
Method for improving conformity and contact bottom coverage of sputtered titanium nitride barrier layers |
| abstract |
A method is described for overcoming the non-conformity and poor step coverage incurred when materials such as metals and barrier layers are deposited into contact openings by physical-vapor-deposition(PVD) techniques such as sputtering and evaporation. Conventional PVD deposition into a vertical walled opening results in a deposit whose thickness diminishes towards the base of the opening. This causes voids when the opening is subsequently filled by chemical-vapor-deposited(CVD) tungsten as well as potential failure of the barrier material due to inadequate coverage at the base of the opening. The method utilizes a two stage reactive ion etching technique to selectively etch the upper portion of the deposited layer while protecting the lower portion with photoresist. A second deposition of barrier layer material then restores material at the top of the opening while augmenting the thickness at the base. This reduces the negative taper of the opening and allows total filling by the subsequent CVD deposition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6790323-B2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348795-B2 |
| priorityDate |
1996-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |