| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45589
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
| filingDate |
2001-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dba4b20c44d61c46974b3f3d5e235d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_259dd58266d7a94a55907e2d7970acc3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b23fd7a7860a7797279de6e0e4a96d3a |
| publicationDate |
2006-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7115516-B2 |
| titleOfInvention |
Method of depositing a material layer |
| abstract |
A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species. The one or more process gases react to deposit a material layer on the substrate. In conjunction with the material layer deposition, the etch species selectively remove portions of the deposited material layer adjacent to high aspect ratio feature openings, filling such features in a void-free and/or seam-free manner. The material layer may be deposited on the substrate using physical vapor deposition (PVD) and/or chemical vapor deposition (CVD) techniques. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10395944-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972504-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7772121-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9548228-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7776733-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10103058-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069535-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014017891-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008274616-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9589835-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008274624-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10256142-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10566211-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006223322-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653353-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9978610-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7589020-B2 |
| priorityDate |
2001-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |