| abstract |
The present invention provides methods of forming a semiconductor workpiece. One method of forming a semiconductor device in accordance with the present invention includes: providing a semiconductor workpiece; forming a via within the semiconductor workpiece, the via including plural sidewalls joining a bottom surface at respective plural corners; first sputtering a process layer upon at least a portion of the bottom surface using ionized metal plasma physical vapor deposition; and following the sputtering of the process layer, second sputtering at least some of the process layer towards the corners within the via. |