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filingDate 2000-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_decaa5e384af2703e343e78772108c7c
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publicationDate 2002-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6440831-B1
titleOfInvention Ionized metal plasma deposition process having enhanced via sidewall coverage
abstract A method for depositing an adhesion layer in a contact region on a semiconductor substrate provides for sufficient coverage on the bottom and sidewalls of the contact region. In an example embodiment, a contact region having a bottom and sidewalls has a first coat of the adhesion layer deposited thereon at a thickness greater than the thickness on the sidewall. To compensate for the narrower adhesion layer thickness on the sidewalls, a second coat of the adhesion layer is deposited so that the second coat on the sidewalls is at a thickness greater than the second coat thickness on the bottom. The adhesion layer is titanium nitride although other materials may be used as well.
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