| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f26a9c2efad3ae086a108f3c04b57d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1999-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f59ce984703178dbf31b6c0555153d26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cb783518ff087588d7cefe9136d5647 |
| publicationDate |
1999-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-5966607-A |
| titleOfInvention |
Metal salicide process employing ion metal plasma deposition |
| abstract |
A process for forming metal salicide layers on an MOS transistor structure that reduces the risk of forming metal silicide bridges between source/drain regions and a polysilicon gate. The process includes the use of a uni-directional ion metal plasma deposition step to deposit a metal layer on the surface of a MOS transistor structure such that the ratio of the metal layer thickness on the surface of a gate sidewall spacers to the metal layer thickness on the surface of a polysilicon gate is no greater than 0.2. The relatively thin metal layer on the surface of the gate sidewall spacer reduces the possibility of forming metal silicide defects. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103125013-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6445194-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6265252-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6306265-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012077342-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005051424-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6410383-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6096643-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6281087-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7335282-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6100191-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103125013-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6790323-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6284653-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010055855-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778797-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6258682-B1 |
| priorityDate |
1997-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |