http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7563672-B2

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filingDate 2006-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7563672-B2
titleOfInvention Methods of fabricating integrated circuit devices including metal-insulator-metal capacitors
abstract Integrated circuit devices including metal-insulator-metal (MIM) capacitors are provided. The MIM capacitors may include an upper electrode having first and second layers. The first layer of the upper electrode includes a physical vapor deposition (PVD) upper electrode and the second layer of the upper electrode includes an ionized PVD (IPVD) upper electrode on the PVD upper electrode. Related methods are also provided.
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