| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2016-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_903893f13bb20805cdf6875ad720d0e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be9c6c0e6c1b3b0ef58602d708dea1a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be08dadf6a00240a2e9da24a1ab0ffce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d493b2972c2169cbaf9cfb13d8839673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01d954c2459f6dd6197a8e700a2a8d44 |
| publicationDate |
2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10037884-B2 |
| titleOfInvention |
Selective atomic layer deposition for gapfill using sacrificial underlayer |
| abstract |
Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269559-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361076-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741458-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019382897-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10679848-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11011379-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021332479-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11293098-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646198-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020017967-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10781519-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11133180-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10804099-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957514-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10734221-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559468-B2 |
| priorityDate |
2016-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |