| abstract |
PROBLEM TO BE SOLVED: To lower a film forming temperature and increase a film forming speed. A silicon-containing and boron-containing film forming step of forming a silicon-containing and boron-containing film on a substrate by supplying a silicon-containing gas and a boron-containing gas into a processing chamber containing a substrate, and a pressure less than atmospheric pressure A silicon-containing and boron-containing film modifying step for reforming a silicon-containing and boron-containing film formed on a substrate by supplying an oxygen-containing gas and a hydrogen-containing gas into a processing chamber set to Have. [Selection] Figure 3 |