| abstract |
Methods of forming dielectric structures with a high dielectric constant (high âkâ) may be used to fabricate gate dielectrics in integrated circuits and in other devices such as spintronic devices. A dielectric structure may be formed by atomic layer deposition of separate layers of zirconium oxide, hafnium oxide, and titanium oxide onto a substrate surface, or it may be formed as a composite layer by a high temperature treatment, such as furnace annealing. |