| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_07c29c18b67cfbb86916e44a50271046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb38fec186d609c6424af9790658a417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee0ca16af2d52705d956d16e4fee8505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_97db84c1b003166edf90b7d0fb1be610
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_af08135e2a6e748b0ec635fbadbbdd44 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02 |
| filingDate |
2010-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a41165b7f79108bf5893bd5f7c24f478
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c69b23832d4391487719b5da26a85cbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45cee3eab9b6ab03ed034d523a3e6cfd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e93b039777ad26d17079bc9afec6c99e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5de519db2cf4c28dcc4f3cf4decc3fe7 |
| publicationDate |
2013-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013001809-A1 |
| titleOfInvention |
Ferroelectric Devices including a Layer having Two or More Stable Configurations |
| abstract |
Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk. Such layers can be disposed at interfaces to promote ferroelectric switching in a semiconductor device. Switching of conduction in the semiconductor is effected by the polarization of a mechanically bi-stable material. This material is not ferroelectric in bulk but can be considered to be when the thickness is sufficiently reduced down to a few atomic layers. Devices including such ferroelectric layers are suitable for various applications, such as transistors and memory cells (both volatile and non-volatile). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110622313-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015060911-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10334846-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018125118-A1 |
| priorityDate |
2009-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |