| abstract |
A photomask blank in which a resist film containing (A) a base resin, (B) an acid generator, and (C) a basic compound is formed, the resist film further comprising (D) a hydroxyl group A fluorine-substituted hydrocarbon group having a first fluorine-substituted hydrocarbon group in which two or more fluorine atoms are bonded to the adjacent carbon atom bonded to the carbon atom to which the hydroxyl group is bonded. The photomask blank containing the high molecular compound containing the 1st repeating unit provided with a chain | strand. [Effect] With the resist film to which the polymer compound of component (D) is added, the entire resist film is uniformly developed in the development process during the resist pattern formation. A resist pattern with a high in-plane accuracy can be formed from a photomask blank provided with a resist film to which a polymer compound of component (D) is added, using the resist pattern of this resist film. A mask can be obtained. [Selection figure] None |