| abstract |
The present invention provides a pattern forming method capable of forming a fine pattern satisfying all of high resolution by suppressing pattern swelling, suppression of development defects, and dry etching resistance. Moreover, the photomask manufactured by the process containing this pattern formation method and the nanoimprint mold original disc are provided. A fine pattern including a step of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition on a substrate, a step of exposing the film, and a step of developing using a developer after exposure. The actinic ray-sensitive or radiation-sensitive resin composition includes a polymer compound (A) having a repeating unit represented by the following general formula (I), and tetrapropylammonium in the developer. A pattern forming method comprising a hydroxide. [Selection figure] None |