| abstract |
The present invention relates to a photomask blank comprising a chemically amplified positive resist film for high energy ray exposure, the resist film comprising (A) a repeating unit represented by the following formula (1) and a repeating unit containing at least one fluorine atom (B) a base resin which is decomposed by the action of an acid to increase the solubility in an alkali developer, (C) an acid generator, and (D) a basic compound. As a result, the polymer compound of component (A) is localized on the surface of the resist film, so that the coatability of the antistatic film on the resist film is improved. In addition, penetration of an acid from the antistatic film or a component that neutralizes the acid can be prevented, and the time-course stability of the resist film is remarkably improved. Particularly, a photomask having high descriptive accuracy can be obtained by using a resist pattern of the resist film from a photomask blank on which a resist film with a polymer compound of component (A) is added. |