| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0388 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2017-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_234f320334f9a97fe9e39a3fe7148a86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b407ce24c25aac286c10a2e26b32a888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_071aa39a2746bf7a509259cff1c77632 |
| publicationDate |
2017-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20170104973-A |
| titleOfInvention |
Chemically amplified negative resist composition and patterning process |
| abstract |
The present invention relates to an apparatus for crosslinking a resist polymer by means of a crosslinking agent and / or a repeating unit having a crosslinkable functional group in the resist polymer, which is formed by an acid generated by irradiation of a high energy beam as a catalyst and which is insoluble in an alkaline developer Wherein the resist polymer contains a repeating unit represented by any one of formulas (1) to (4) The proportion of the repeating unit represented by the formula (1) is from 0.5 to 10 mol%, and the ratio of the repeating units represented by the formulas (2) to (4) is from 50 to 99.5 mol%. According to the present invention, in addition to the improvement of line edge roughness (LER), it is possible to form a resist profile having a low degree of undercut peculiar to a negative resist composition and to provide high resolution. |
| priorityDate |
2011-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |