| abstract |
The present invention provides a resist material having high resolution, density dependency, and excellent exposure margin. A sulfonium salt represented by the general formula (1). (R 1 is H, F, methyl group or trifluoromethyl group. R 2 , R 3 and R 4 are alkyl group, alkenyl group or oxoalkyl group, aryl group, aralkyl group or aryloxoalkyl group, or R 2. , R 3 and R 4 may form a ring together with the sulfur atom in the formula, A is a divalent hydrocarbon group having a cyclic structure which may contain a hetero atom, and n is 0 or 1.) [Selection figure] None |