| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C381-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| filingDate |
2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_234f320334f9a97fe9e39a3fe7148a86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d9dfa6f235b0ff4ba60dae7959dcaed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_926b08cd2f1681877250ba029f56b2fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_071aa39a2746bf7a509259cff1c77632 |
| publicationDate |
2018-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3279734-A1 |
| titleOfInvention |
Positive resist composition, resist pattern forming process, and photomask blank |
| abstract |
A positive resist composition comprising a polymer adapted to be decomposed under the action of acid to increase its solubility in alkaline developer and a sulfonium compound of specific structure has a high resolution. When the resist composition is processed by lithography, a pattern with minimal LER can be formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3579050-A1 |
| priorityDate |
2016-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |