| abstract |
The purpose of the present invention is to provide a method for forming trench patterns and/or hole patterns and a radiation-sensitive resin composition which are suitable for immersion exposure and have improved etching resistance, and which are excellent for the general characteristics of resist films such as sensitivity, cross-sectional shape and resolution. The present invention is a method for forming trench patterns and/or hole patterns which includes, (1) a resist film forming step in which a radiation-sensitive resin composition is applied on a substrate, (2) an exposure step, and (3) a development step; said method being characterized in that a developing solution in the development step (3) contains at least 50 mass % of an organic solvent, and the radiation-sensitive resin composition contains, [A] a polymer that includes a structural unit (I) having an acid dissociable group and an alicyclic group, where said alicyclic group does not dissociate from a molecular chain due to the effect of acid, and [B] a radiation-sensitive acid-generating body. |