| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6579f61638632967c26cf21ea3750a26 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0047 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05C17-0103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate |
2011-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee2e12f0fb8d98420342d6975a7df473 |
| publicationDate |
2017-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9696622-B2 |
| titleOfInvention |
Compositions and processes for immersion lithography |
| abstract |
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. |
| priorityDate |
2005-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |