http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8198009-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_edba46d50300d77e5664792c2305dd29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1434599d8125f53b4d9da4b7c33bfa8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b27b8c5a299b6ceb83eb81ffdf567636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61H2201-0149 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61H2201-0192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-128 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61H7-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-032 |
| filingDate | 2010-08-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea3c07bbcb6278a918a8b317152abd1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf13e48f7c838d6edc7a68ee70c302ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_13308025bb61fc5427bafab5d822f0a6 |
| publicationDate | 2012-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8198009-B2 |
| titleOfInvention | Resist pattern thickening material and process for forming resist pattern, and semiconductor device and process for producing the same |
| abstract | The object of the present invention is to provide a process for forming a resist pattern that is capable to utilize excimer laser beam, the thickening level of the resist pattern is controllable uniformly, constantly and precisely, without being affected substantially by environmental changes such as temperatures and humidity, and storage period, and space pattern of resist may be formed with a fineness exceeding exposure limits or resolution limits of available irradiation sources. The process for producing a semiconductor device is characterized in that forming a resist pattern on a surface of workpiece, coating a resist pattern thickening material on the resist pattern, thickening the resist pattern to form a thickened resist pattern, and patterning the surface of workpiece by etching using the thickened resist pattern as a mask, wherein the resist pattern thickening material comprises a resin, and exhibits a pH value of above 7 and not over 14 at coating or after coating on the resist pattern. |
| priorityDate | 2004-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 297.