| abstract |
PROBLEM TO BE SOLVED: To provide a fine pattern forming material having good storage stability and appropriate cross-linking reactivity when used for further miniaturizing a resist pattern formed by ordinary lithography technology. And a method for forming a fine pattern using the same. SOLUTION: (A) A completely water-soluble crosslinking agent selected from glycoluril in which at least one hydrogen atom of an imino group is substituted with a hydroxyalkyl group, and (B) a water-soluble resin is dissolved in an aqueous medium. Then, while forming a fine pattern forming material, a resist pattern is formed on a substrate using a chemically amplified resist containing an acid generator, and then a coating film made of the fine pattern forming material is provided thereon, followed by heat treatment. Then, a water-insoluble reaction layer is formed at the interface between the resist pattern and the coating film, and then a non-reactive portion of the coating film is removed with an aqueous solvent to form a fine pattern. |