| abstract |
(57) Abstract: Provided is a resist pattern reducing material capable of forming a fine pattern exceeding the limit of an exposure wavelength, and a method of forming a fine resist pattern using the same. (A) An acidic film made of a resist pattern reducing material by applying an acidic resist pattern reducing material containing a water-soluble resin on a resist pattern formed using a positive type chemically amplified resist. (B) converting the surface layer of the resist pattern to alkali-soluble; and (c) thereafter, treating the resist pattern thus treated together with an acidic film with an alkaline solution to form the film and the alkali-soluble film. Forming a fine resist pattern by removing the resist pattern surface layer that has been converted into a resist pattern and reducing the size of the resist pattern. |