| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 |
| filingDate |
2009-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6aaf6cc25fe176d07197ba3398dd1162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c43a31137ba5b6a077af20fa8260c988
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2f4c8b008f38b35cae5d7f6c399222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac403b38b142e2ce65d41a9ae257430b |
| publicationDate |
2011-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7951730-B2 |
| titleOfInvention |
Decreasing the etch rate of silicon nitride by carbon addition |
| abstract |
Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008124946-A1 |
| priorityDate |
2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |