| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-515 |
| filingDate |
2003-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d04be56a9d142d17374c31321a508079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a07e28f9404275b528a7832c8556fa48 |
| publicationDate |
2005-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6897163-B2 |
| titleOfInvention |
Method for depositing a low dielectric constant film |
| abstract |
A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes at least one silicon oxycarbide layer and at least one substantially silicon-free layer comprising carbon and hydrogen. The layers are deposited from a gas mixture including an organosilicon compound and a silicon-free hydrocarbon-based compound. The low dielectric constant film is deposited by a plasma process than includes pulses of RF power. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7633163-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007066086-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006240652-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9514932-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009017231-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009017639-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005153073-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7422774-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7601631-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007134435-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014045342-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007111540-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006226548-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007275569-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7825042-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004253378-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7655577-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7998536-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005037153-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021265158-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7989033-B2 |
| priorityDate |
2003-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |