abstract |
Methods are described for forming flowable carbon layers on a semiconductor substrate. A local excitation (such as a hot filament in hot wire CVD, a plasma in PECVD or UV light) may be applied as described herein to a silicon-free carbon-containing precursor containing a hydrocarbon to form a flowable carbon-containing film on a substrate. A remote excitation method has also been found to produce flowable carbon-containing films by exciting a stable precursor to produce a radical precursor which is then combined with unexcited silicon-free carbon-containing precursors in the substrate processing region. |