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publicationDate 2015-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015221752-A1
titleOfInvention Apparatus and Method for Memory Device
abstract A method comprises forming a gate stack over a substrate, applying an oxygen flush process to the gate stack, forming a uniform oxide layer on the gate stack as a result of performing the step of applying the oxygen flush process and removing the uniform oxide layer through a pre-clean process.
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