http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7575990-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2005-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_501052f7a7255b346c42e23be05db150 |
| publicationDate | 2009-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7575990-B2 |
| titleOfInvention | Method of forming self-aligned contacts and local interconnects |
| abstract | A method of forming a plurality of self-aligned contacts of a core region and local interconnect openings of a peripheral region of a semiconductor device is disclosed. A plurality of gate-structures are formed on the core and peripheral regions of a semiconductor substrate. Sidewall spacers then are formed around the gate structures. A liner layer and a dielectric layer are sequentially formed on the semiconductor substrate. Then a photoresist pattern is formed to define a plurality of self-aligned contacts of said core region and local interconnect openings of the peripheral region, and the dielectric layer, liner layer and sidewall spacers are etched to form a plurality of self-aligned contacts of the core region and local interconnect contacts of the peripheral region. This is achieved by an etching step having a high selectivity with respect to the dielectric layer and sidewall spacers. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8927407-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8928048-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8940633-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10164073-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015221752-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946075-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014379-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7858514-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009001595-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8532796-B2 |
| priorityDate | 2005-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.