| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8c55ede69253235a50613aa9b5a030a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8120b23e291acf42f85a990a400080e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7887
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2008-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8c8696d25e75b807b6068412289205b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7a7c39c2039a9482653b08b147af060 |
| publicationDate |
2014-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8710572-B2 |
| titleOfInvention |
Nonvolatile semiconductor storage device having conductive and insulative charge storage films |
| abstract |
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022223612-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10164073-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014022840-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553729-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9025373-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019027609-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015221752-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581325-B2 |
| priorityDate |
2008-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |