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filingDate 2007-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b9ac433eca99be03abe84f9f0be039d
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publicationDate 2010-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7816726-B2
titleOfInvention Nonvolatile memories with laterally recessed charge-trapping dielectric
abstract Charge-trapping dielectric ( 160 ) in a nonvolatile memory cell is recessed from under the control gate's edge and/or from an edge of a substrate isolation region. The recessed geometry serves to reduce or eliminate charge trapping in regions from which the charge may be difficult to erase.
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