| abstract |
A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH 3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH 2 ] n — where n is greater than or equal to 1, HC═CH, C═CH 2 , C═C or a [S] n linkage, where n is a defined above. |