Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4757 |
filingDate |
2009-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_813912349da5c5b73e22fc3be2d4c82a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21a6a355b8ee7c06a55ceb721dc8ee8d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f37aaaa734ac3eace073b1d68819e9e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ce0a4c78d30a3f83efd1ce44d8b8bd2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8510b303eb16d7f515ee42e789a9d872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62a5fced3c81fc9d1fa4745c8c2f3429 |
publicationDate |
2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7972976-B1 |
titleOfInvention |
VLSI fabrication processes for introducing pores into dielectric materials |
abstract |
Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conductive material is provided with a relatively smooth continuous surface on which to deposit. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021048263-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013183825-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8889233-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-202022104518-U1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011049503-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8164196-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8883638-B2 |
priorityDate |
2005-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |