| abstract |
A low-k precursor reactant compound containing silicon and carbon atoms is flowed into a CVD reaction chamber. High-frequency radio-frequency power is applied to form a plasma. Preferably, the reaction chamber is part of a dual-frequency PECVD apparatus, and low-frequency radio-frequency power is applied to the reaction chamber. Reactive components formed in the plasma react to form low-dielectric-constant silicon carbide (SiC) on a substrate surface. A low-k precursor is characterized by one of: a silicon atom and a carbon-carbon triple bond; a silicon atom and a carbon-carbon double bond; a silicon-silicon bond; or a silicon atom and a tertiary carbon group. |