| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_34c88c465202a4bc7d8388cca9c9bf52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e66be87630d7cef0ce770e1d898eec |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-0635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-06341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3174 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-073 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-04 |
| filingDate |
2019-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a320872e7f0b52746476953e7529a24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3361298c7bf5d5614f68765f7cf8ca8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fb0615ba460f6a1c8872db12c0d7a0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c745aaab8216fe4f48477b5905a6402d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd0267529e69b3e855b1c3979ab65730 |
| publicationDate |
2020-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2020076528-A1 |
| titleOfInvention |
Electron gun and electron microscope |
| abstract |
An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A thin, contiguous SiC layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the SiC layer. Optional gate layers may be placed at, slightly lower than or slightly higher than the height of the field emitter tip portion to achieve high emission current and fast and accurate control of the primary emission beam. The field emitter can be p-type doped and configured to operate in a reverse bias mode, or the field emitter can be n-type doped. |
| priorityDate |
2018-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |