| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 |
| filingDate |
2007-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8defa407567ffaaf18b9f2f83db659d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43ffb4899e36febf0eaa994d1a1a2c6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c09a647e1777e6d510894d08f09b82e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcdb876192b151309d83c66aefae5826 |
| publicationDate |
2009-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7473653-B1 |
| titleOfInvention |
Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups |
| abstract |
Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precursor has carbon-carbon double or triple bonds. In other cases, one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. In other cases, the structure former precursor has carbon-carbon double or triple bonds and one or both of the structure former precursor and porogen precursor has one or more bulky organic groups. Once the precursor film is formed, the porogen is removed, leaving a porous low-k dielectric matrix with high mechanical strength. Different types of structure former precursors and porogen precursors are described. The resulting low stress low-k porous film may be used as a low-k dielectric film in integrated circuit manufacturing applications. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8926745-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7695765-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012118204-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7972976-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008188088-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7947565-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7781351-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7799705-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7906174-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7737525-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009239390-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7923385-B2 |
| priorityDate |
2003-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |