| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c2bdc86e572510e8b947df9bb3edb374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f718c3fc8bde1d0d77b68c981ce3c1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3fbca9672e73d87c9ed2b1568b43317a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a77ac2615c182ee9f3a2b7297ab42e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8a8c8b1e2ea3f1877f0204ee6ffe049 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-511 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2012-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b615ade94cfe472dc87ea4c6ec2ee09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc4a69d366f8b68a898e1577c9037bb6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4da9421722bfeddc968320b28274a169
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2e902a8cffb27cef915ab7b93cda66d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3d3725e1a404dc6a8e7043f266d0041 |
| publicationDate |
2015-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9219037-B2 |
| titleOfInvention |
Low k porous SiCOH dielectric and integration with post film formation treatment |
| abstract |
A porous SiCOH dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bonding moieties. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. A p-SiCOH dielectric film is produced that is flexible since the pores include stabilized crosslinking —(CH x )— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond. |
| priorityDate |
2007-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |