| abstract |
PROBLEM TO BE SOLVED: To provide a high anti-reflection effect, not to cause intermixing, to have a higher dry etching rate than a photoresist, and to be excellent in resolution and film thickness dependency. Provided are a photoresist anti-reflective coating material composition and a method for forming a resist pattern which are also excellent in storage stability over time. SOLUTION: An antireflection film material composition comprising the following low molecular light absorber, polymer material and solvent, and a resist pattern forming method using the antireflection film material composition. The low-molecular-weight light absorber has a molecular weight of 2,000 or less and 365 an aromatic compound or a heteroaromatic compound having a molar extinction coefficient of at least 10,000 for light having a wavelength of at least one of nm, 248 nm and 193 nm, and having two or more crosslinkable or polymerizable functional groups in the molecule. is there. |