Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-151 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L101-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08L61-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08K5-00 |
filingDate |
2003-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a28a512426e9580683736d2c5420675 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a10c67e06d16a8a91166f5c4d8b10580 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_537af452647e24cce15b32fd29d0baaf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc6a19055ab71bfe7066169b927fae8b |
publicationDate |
2011-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7947424-B2 |
titleOfInvention |
Composition for forming anti-reflective coat |
abstract |
There is provided a composition for forming anti-reflective coating containing a urea compound substituted by hydroxyalkyl group or alkoxyalkyl group, and preferably a light absorbing compound and/or a light absorbing resin; a method of forming a anti-reflective coating for a semiconductor device by use of the composition; and a process for manufacturing a semiconductor device by use of the composition. The composition according to the present invention exhibits a good light-absorption to a light having a wavelength used for manufacturing a semiconductor device. Therefore, the composition exerts a high protection effect against light reflection, and has a high dry etching rate compared with photoresist layers. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8697336-B2 |
priorityDate |
2002-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |