http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100778243-B1

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
filingDate 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2007-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2007-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100778243-B1
titleOfInvention Organic Anti-reflective Film for ArF Photoresist and Manufacturing Method Thereof
abstract The present invention provides an organic anti-reflective coating composition for ArF photoresists comprising a light absorber represented by the following formula (1) capable of forming an undercoat layer that effectively reduces the adverse effects of reflection from a background substrate in a photolithography process using various radiations; An organic antireflection film for ArF photoresist using this composition and a method of manufacturing the same are provided.n n n [Formula 1]n n n n n n n n In formula 1, X is hydrogen or methyl; R 1 to R 15 are at least one of these hydroxyl groups, and the others are each independently or simultaneously hydrogen; halogen; Nitro group; Amino group; An alkyl group having 1 to 3 carbon atoms containing or without a hydroxyl group; An alkoxy group having 1 to 3 carbon atoms, which may or may not contain a carbonyl group; benzene; Or cycloalkyl having 5 to 6 carbon atoms.n n n Light absorber, organic antireflection film, photolithography, photoresist, resolution
priorityDate 2002-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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