http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015106652-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e3b0a3dbf8d6c9712d86ea1383fd5327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e6ad2335ce3a27371176819e594d072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6531cd1c4106c1494672a3ba4a5912d9 |
| publicationDate | 2015-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015106652-A |
| titleOfInvention | Silicon electrode plate for plasma processing apparatus and manufacturing method thereof |
| abstract | A silicon electrode plate for a plasma processing apparatus, which is less prone to abnormal discharge and particles, can form a homogeneous plasma region, has less chipping when cut from a silicon ingot, and has good productivity. And a method for manufacturing the same. SOLUTION: A central region 7 in which a large number of air holes 2 for circulating a plasma generating gas are formed penetrating in the thickness direction, and the air holes 2 are formed in a ring shape on the outside thereof. The outer peripheral region 8 is integrally formed, the central region 7 is made of pseudo single crystal silicon, and the outer peripheral region 8 is made of polycrystalline silicon. [Selection] Figure 1 |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2021010468-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7201815-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021010468-A1 |
| priorityDate | 2013-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.