http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004083289-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02
filingDate 2002-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53cc32b14557bc579e94cf12b589712f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16827de49af1b35b588063d01bf817c9
publicationDate 2004-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004083289-A
titleOfInvention Ultra-low resistance polycrystalline silicon and its manufacturing method
abstract [PROBLEMS] To eliminate the problem that cracks occur in an ingot when producing a polycrystalline silicon ingot obtained by directly solidifying with a crucible, and to prevent internal stress from being released after production to cause cracks and cracks. A sound polycrystalline silicon ingot having an outer diameter of 120 mm or more and a specific resistance of less than 1 mΩ · cm can be easily manufactured. SOLUTION: Molten silicon to which a large amount of boron doping material is added is stirred and melted by relatively high-speed and intermittent rotation of a crucible, solidified after holding this intermittent rotation for a certain period of time before solidification starts, and further solidified after solidification. By performing the predetermined reheating, a large-sized polycrystalline silicon ingot having an outer diameter of, for example, 380 mm can be obtained without an internal crack. [Selection diagram] None
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101993933-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130108147-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9074298-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007063048-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109136855-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011140241-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109825877-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015106652-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109825877-A
priorityDate 2002-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 25.