abstract |
A nitride film having high resistance to hydrogen fluoride is formed in a low temperature region. A step of supplying a source gas to a substrate, a step of supplying a plasma-excited hydrogen-containing gas to the substrate, and a step of supplying a plasma-excited or thermally-excited nitriding gas to the substrate And a step of supplying a plasma-excited nitrogen gas and / or a plasma-excited rare gas to the substrate, and a step of forming a nitride film on the substrate by performing a cycle including a predetermined number of times. Have. [Selection] Figure 1 |