| abstract |
It is possible to reduce the impurity concentration, particularly the hydrogen concentration, in the film, thereby forming a silicon nitride film of good quality excellent in etching resistance. (a) supplying a raw material containing a first element to a substrate; (b) supplying nitrogen gas which is plasma-excited to the substrate after the step (a); and (c) A step of supplying a reactant containing the second element to the substrate; and (d) after the step (c), performing a cycle of performing the step of supplying the nitrogen gas subjected to plasma excitation to the substrate at the same time a predetermined number of times, (B) and between (c) and (d), in a gas purging state and in a gas non-supply state of the space in which the substrate is present Is not carried out. |