| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-342
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2019-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af56ba06ca223f2968341fce9d0d830a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb7632d4fc268af08630b15331639263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa1d72c8ab0bdb39b281791d3eb04448 |
| publicationDate |
2020-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2020161722-A |
| titleOfInvention |
Substrate processing method and substrate processing equipment |
| abstract |
PROBLEM TO BE SOLVED: To provide a substrate processing method capable of forming a nitride film or the like so as to obtain a desired film distribution. SOLUTION: A raw material gas supply step of supplying a raw material gas containing an element to be nitrided, a hydrogen gas supply step of supplying hydrogen gas activated by plasma after the raw material gas supply step, and heat activation. A nitride film is formed on a substrate having a thermal nitriding step of supplying a nitriding gas containing nitrogen and nitriding the element, and a plasma nitriding step of supplying a nitriding gas containing nitrogen activated by plasma and nitriding the element. Substrate processing method for forming a film. [Selection diagram] FIG. 14 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230057264-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20230114707-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7039085-B1 |
| priorityDate |
2019-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |